Irradiation at ambient temperature, 10MRad, dose rate 36.6kRad/min.

Excess Idd factor for module K4_205 irradiated at PS - 1.64. 

Excess Idd factor for module B020 irradiated at PS - 1.28. 

Excess Idd factor for module K4_218 irradiated at PS - 2.25.

Excess Idd factor for module B037 irradiated at PS - 2.64.

Excess Idd factor for module B050 irradiated at PS - 2.34.

Excess Idd factor for module B047 irradiated at PS - 1.73.

The normalized values (I_{AfterIrradiation}/I_{BeforeIrradiation}) of current consumption of the modules irradiated at PS are plotted versus normalized current consumption of chips irradiated with X-Rays. The values of current consumption of the chips irradiated with X-Rays are taken for:

• ambient temperature (~40 deg. C)

• Vdd = 4.5V

• no annealing (dose rate 36.6kRad/min)

Except the chips coming from batch Z38850 wafer 12 there is a good correlation between results from PS and X-Ray machine. If one want to look at the correlation plot for values take after some annealing (1h at 100 deg. C) for 3 chips annealed at high temperature the results from PS and X-Ray irradiation are highly correlated (also for chip from wafer 12 batch Z38850).

Site Created on Thursday, 30 November 2000. Last modified by Jan Kaplon on 12/07/2001