10MRad X-Ray irradiation  and annealing at 100 deg  C.

Current consumption of the ABCD chip: 

The annealing time was limited to 30 - 60 h due to restricted access to the equipment. The rise of the current consumption at the beginning of the annealing is due to the rise of temperature from ~30 to 100 deg. C (drop of the current at the end of the annealing is due to the lower temperature). The measurements of current consumption were done at Vdd=4.5V (unless specified).


Chip Z36459-W03-X03-Y07 (excess Idd factor for module irradiated at PS - 1.28). Time between the beginning of annealing and end of irradiation ~168h. 

       

Chip Z36459-W06-X02-Y11 (excess Idd factor for module irradiated at PS - 2.34). Time between the beginning of annealing and end of irradiation ~96h.   

       

Chip Z38850-W12-X07-Y05 (excess Idd factor for module irradiated at PS - 1.73). Time between the beginning of annealing and end of irradiation ~240h.  

       

 


Normalized value of the excess current measured in Slave mode 

(ISlave - ISlaveBeforeIrrad)/ISlaveBeforeIrrad 

 


Site Created on Thursday, 30 November 2000. Last modified by Jan Kaplon on 11/22/2001